 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CED9926/CEU9926 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 20V , 26A , RDS(ON)=30m @VGS=4.5V. RDS(ON)=40m @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. D G S G D S D G CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 12 26 78 26 38 0.25 -55 to 175 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 6-82 4 50 C/W C/W CED9926/CEU9926 ELECTRICAL CHARACTERISTICS (TC= 25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b Symbol Condition VGS = 0V, ID=250A VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 8A VGS = 2.5V, ID = 6.6A VDS = 5V, VGS = 4.5V VDS = 10V, ID = 8A Min Typ Max Unit 20 1 100 0.5 1.5 30 40 26 15 500 V A nA V m m A S C 4 6 ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS b PF PF PF VDS =15V, VGS = 0V f =1.0MHZ 300 140 SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A VGS = 4.5V, RGEN =6 VDS = 10V,ID = 8A VGS = 4.5V 20 18 60 28 10 2.3 2.9 40 40 108 56 15 ns ns ns ns nC nC nC 6-83 CED9926/CEU9926 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is = 4A Min Typ Max Unit 1.3 V DRAIN-SOURCE DIODE CHARACTERISTICS a 6 Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 30 VGS=4.5,3.5,3V 25 VGS=2.5V 12 15 ID, Drain Current (A) 20 15 VGS=2V 10 5 0 0 1 2 3 4 ID, Drain Current (A) 9 6 25 C 3 Tj=125 C 0.5 1 1.5 -55 C 2 2.5 VGS=1.5V 0 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1000 Figure 2. Transfer Characteristics 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 ID=8A VGS=4.5V 800 C, Capacitance (pF) 600 400 Ciss Coss 200 Crss 0 0 5 10 15 20 VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 6-84 CED9926/CEU9926 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 1.15 ID=250 A 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 VDS=VGS ID=250 A 6 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 20 Figure 6. Breakdown Voltage Variation with Temperature 50 gFS, Transconductance (S) Is, Source-drain current (A) 16 12 8 4 VDS=10V 0 0 3 6 9 12 10 1.0 0.1 0.6 0.8 1.0 1.2 1.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 5 Figure 8. Body Diode Forward Voltage Variation with Source Current 2 VGS, Gate to Source Voltage (V) ID=8A VDS=10V 10 ID, Drain Current (A) 4 3 2 1 0 0 3 6 9 12 10 1 R ( DS ON )Li mi t 1s 10s 10ms 100ms 10 0 -1 DC 10 10 -2 TA=25 C R JA=50 C/W Single Pulse 10 0 10 1 10 2 10 -1 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 6-85 Figure 10. Maximum Safe Operating Area CED9926/CEU9926 4 V IN D VGS VDD t on RL VOUT VOUT RGEN G 90% 10% toff tr 90% td(on) td(off) 90% 10% tf INVERTED 6 S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 PDM t1 0.01 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -2 Single Pulse -3 10 10 -4 10 -3 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 6-86 |
Price & Availability of CEU9926
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |